Method of manufacturing a flash EEPROM cell using the select gat

Details Method of manufacturing a flash EEPROM cell using the select gat Method of manufacturing a flash EEPROM cell using the select gat

1996-02-05

1997-03-04

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 50, 437191, H01L 218247

Patent

active

056078714

ABSTRACT:
A method of manufacturing a flash EEPROM cell with a split-gate structure which can improve the electrical characteristics of the cell by forming a source region through an ion implantation method using a select gate as a mask to prevent the reduction in the electrical characteristics of a gate oxide layer is disclosed.

REFERENCES:
patent: 4861730 (1989-08-01), Hsia et al.
patent: 5008212 (1991-04-01), Chen
patent: 5280446 (1994-01-01), Ma et al.
patent: 5429969 (1995-07-01), Chang
patent: 5494838 (1996-02-01), Chang et al.

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