Semiconductor nonvolatile memory device in which high capacitanc

Details Semiconductor nonvolatile memory device in which high capacitanc Semiconductor nonvolatile memory device in which high capacitanc

1998-03-13

1999-11-02

Tran, Andrew Q.

Static information storage and retrieval

Floating gate

Particular biasing

36518518, 3651852, 36518521, 36518525, G11C 1606

Patent

active

059782714

ABSTRACT:
In the semiconductor memory device which has nonvolatile memory cells, the bit lines which are typified by high capacitances, are isolated from the input/output nodes of the corresponding sense amplifiers during the amplifying operation of the sense amplifier. A flip-flop circuit, such as a CMOS latch circuit, is used for each of the sense amplifiers and a switch circuit is connected between each input/output of each sense amplifier and the data (bit) line associated therewith and is turned OFF immediately before or after commencing of the amplifying operation of the sense amplifier. During the amplifying operation of the sense amplifier, the data (bit) line, having a large parasitic capacitance as a result of being typically connected to a large number of nonvolatile memory cell transistors, such as of the single transistor type having both a floating gate and control gate electrodes, is electrically disconnected (electrically isolated) from the sense amplifier.

REFERENCES:
patent: 4694427 (1987-09-01), Miyamoto et al.
patent: 4804871 (1989-02-01), Walters, Jr.
patent: 4933906 (1990-06-01), Terada et al.
patent: 5022009 (1991-06-01), Terada et al.
patent: 5343433 (1994-08-01), Duvvury et al.
patent: 5377151 (1994-12-01), Komuro
patent: 5446690 (1995-08-01), Tanaka et al.
IEEE 1992 Symposium on VLSI Circuits Digest of Technical Papers, "A Quick Intelligent Program Architecture for 3V-Only NAND-EEPROMs", T. Tanaka, et al., pp. 20-21.
"Fundamentals of MOS Digital Integrated Circuits", John P. Uyemura, pp. 414 and 547 (1988).

Affiliated with

Also associated with

Rating

Semiconductor nonvolatile memory device in which high capacitanc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor nonvolatile memory device in which high capacitanc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor nonvolatile memory device in which high capacitanc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2144700