Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-12-20
1995-08-22
Ngo, Ngan J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257231, 257233, 257249, 257438, 257444, 257448, 257459, H01L 2978, H01L 2714, H01L 3100
Patent
active
054442800
ABSTRACT:
The disclosed device and system enables the cell-based amplification of photo-e The disclop41 The detection device is realized by overlaying an amplifying semi-conductor structure, generally referred to as avalanche photo-diodes, on top of a typical prior-art charge coupled device structure. The disclosed arrangement is a hybrid of these two technologies with certain provisions which allow the two prior art technologies to function properly as a single integrated unit.
REFERENCES:
patent: 4629295 (1986-12-01), Vogl
patent: 4663656 (1987-05-01), Elabd et al.
patent: 4691253 (1987-09-01), Silver
patent: 4704632 (1987-11-01), Van Den Heuvel
patent: 4827346 (1989-05-01), Hicks, Jr.
patent: 4851914 (1989-07-01), Pfanhouser et al.
patent: 4868855 (1989-09-01), Boudewijns et al.
patent: 4875100 (1989-10-01), Yonemoto et al.
patent: 4933731 (1990-06-01), Kimurh
patent: 5021854 (1991-06-01), Huth
patent: 5065029 (1991-11-01), Krivanek
patent: 5138458 (1992-08-01), Nagasaki et al.
patent: 5162885 (1992-11-01), Hunt et al.
patent: 5168528 (1992-12-01), Field, Jr.
patent: 5182647 (1993-01-01), Chang
patent: 5216250 (1993-06-01), Pellegrino et al.
patent: 5221964 (1993-05-01), Chamberlain et al.
patent: 5251037 (1993-10-01), Busenberg
patent: 5262867 (1993-11-01), Kojima
Jaroslav Hynecek, "CCM-A New Low-Noise Charge Carrier Multiplier Suitable for Detection of Charge in Small Pixel CCD Image Sensors," pp. 1972-1975, IEEE Yransactions on Electron Devices, vol. 39, No. 8, Aug. 1992.
Hiroyoshi Komobuchi and Takao Ando, "A Novel High-Gain Image Sensor Cell Based on Si p-n APD in Charge Storage Mode Operation," pp. 1861-1868, IEEE Transactions on Electron Devices, vol. 37, No. 8, Aug. 1990.
Blouke Morley M.
Rhoads Geoffrey B.
Ngo Ngan J.
Pinecone Imaging Corporation
Scientific Imaging Technologies, Inc.
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