Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1994-07-01
1995-08-22
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257139, 257371, 257342, 257346, H01L 29745, H01L 29749
Patent
active
054442737
ABSTRACT:
A semiconductor device in which on-operation by a low voltage can be realized, the discontinuity of a current-to-voltage characteristic can be solved, and current concentration in the device configuration is reduced to prevent device break. The semiconductor device comprises: a substrate of a silicon thin plate having a first conductivity type collector region and a second conductivity type base region formed on the first conductivity type collector region; a plurality of wide and narrow gate polysilicon layers selectively laminated with different widths on the substrate through gate insulating films respectively; first conductivity type base regions formed by thermal diffusion by using the wide gate polysilicon layer as a mask; second conductivity type drain and source regions respectively formed so as to be shallower than the first conductivity type base regions by using the plurality of gate polysilicon layers as masks; emitter electrodes provided respectively on the source regions which are farther from the wide polysilicon layer than the corresponding drain regions so as to contact with the first conductivity type base regions respectively so that the source region and the base region are short-circuited; and the second conductivity type base region being electrically connected to the drain and source regions through a plurality of channels formed in the surfaces of the first conductivity type base regions respectively when a gate voltage is applied to the gate polysilicon layers.
REFERENCES:
patent: 4502070 (1985-02-01), Leipold
patent: 4857983 (1989-08-01), Baliga
B. Jayant Baliga, "The MOS-Gated Emitter Switched Thyristor," Proceedings of 1990 International Symposium on Power Semiconductor Devices & ICs, Toyko pp. 117-121.
B. Jayant Baliga, "The MOS-Gated Emitter Switched Thyristor," TEEE Electron Device Letters, vol. 11, No. 2, Feb. 1990, pp. 75-77.
Fuji Electric & Co., Ltd.
Jackson Jerome
LandOfFree
MOSFET controlled thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOSFET controlled thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOSFET controlled thyristor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2143479