Method and apparatus for low temperature, low pressure chemical

Details Method and apparatus for low temperature, low pressure chemical Method and apparatus for low temperature, low pressure chemical

1994-01-24

1997-03-04

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, C23C 1600

Patent

active

056075111

ABSTRACT:
A method and apparatus for depositing single crystal, epitaxial films of silicon on a plurality of substrates in a hot wall, isothermal deposition system is described. The deposition temperatures are less than about 800.degree. C., and the operating pressures during deposition are such that non-equilibrium growth kinetics determine the deposition of the silicon films. An isothermal bath gas of silicon is produced allowing uniform deposition of epitaxial silicon films simultaneously on multiple substrates. This is a flow system in which means are provided for establishing an ultrahigh vacuum in the range of about 10.sup.-9 Torr prior to epitaxial deposition. The epitaxial silicon layers can be doped in-situ to provide very abruptly defined regions of either n- or p-type conductivity.

REFERENCES:
Meyerson et al, Low Temperature Silicon Epitaxy by Hot Wall Ultra High Vacuum/Low Pressure CVD Techniques, Abstract No. 266, Extended Abstracts vol. 85-2 fall meeting, Las Vegas, Nevada, Oct. 13-18, 1985.

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