Thin film transistor liquid crystal display with a silicide laye

Details Thin film transistor liquid crystal display with a silicide laye Thin film transistor liquid crystal display with a silicide laye

1998-08-21

1999-11-02

Sikes, William L.

Liquid crystal cells, elements and systems

Particular structure

Having significant detail of cell structure only

349 43, G02F 11343, G02F 1136

Patent

active

059780584

ABSTRACT:
There are provided a thin film transistor liquid crystal display device in which an aluminum layer and an ITO layer can be connected with simplicity and certainty and a fabricating process therefor.
A thin film transistor liquid crystal display device comprising: a pair of substrates; a liquid crystal sandwiched therebetween; an aluminum layer formed on a surface in which the liquid crystal is held, of one substrate; an insulating layer covering the aluminum layer; a contact hole formed in the insulating layer so as to reach the aluminum layer; an indium tin oxide layer formed on the insulating layer including the inner surface of the contact hole; and a silicide layer lying between the indium tin oxide layer and the aluminum layer.

REFERENCES:
patent: 5414547 (1995-05-01), Matsuo et al.
patent: 5554864 (1996-09-01), Koyama
patent: 5852481 (1998-12-01), Hwang

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