Multiple wavelength, surface emitting laser with broad bandwidth

Details Multiple wavelength, surface emitting laser with broad bandwidth Multiple wavelength, surface emitting laser with broad bandwidth

1996-07-08

1997-12-16

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 23, 372 46, 372 96, H01S 319, H01S 310, H01S 308

Patent

active

056993757

ABSTRACT:
A multiple wavelength surface emitting laser has a first and second broad bandwidth distributed Bragg reflector (DBR) which reflect light at multiple wavelengths. The surface emitting laser structure comprises at least two cavities with each cavity containing one or more active layers for respectively emitting light at different wavelengths. In a preferred embodiment for a dual wavelength surface emitting laser, a first cavity contains a first active layer for emitting light of a first wavelength and a second cavity contains only a second active layers and emits only light of the second longer wavelength. The second layer has been eliminated in the first cavity and the first active layer has been eliminated in the second cavity by layer intermixing before completing the epitaxial growth.

REFERENCES:
patent: 5052016 (1991-09-01), Mahbobzadeh et al.
patent: 5245622 (1993-09-01), Jewell et al.
patent: 5319655 (1994-06-01), Thornton
patent: 5386428 (1995-01-01), Thornton et al.
Forchel et al, "Potential and Limitations of Selective Disordering processes in GaInAsP and AlGalnP Heterostructures", Conference Proceedings. Sixth International Conference On Indium Phosphide and Related Materials, New York: IEEE, pp. 375-378, Mar. 1994.
Sun et al, "Fabrication of Multi-Wavelength Lasers by Selective Intermixing of Si-Doped GaAs/AlGaAs Quantum Wells," Conference Proceedings. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. New York: IEEE, pp. 260-261, Oct. 1995.

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