Oscillation polarization selective semiconductor laser and optic

Details Oscillation polarization selective semiconductor laser and optic Oscillation polarization selective semiconductor laser and optic

1996-12-19

1997-12-16

Davie, James W.

Coherent light generators

Particular beam control device

Modulation

372 45, 372 50, 372 96, H01S 310, H01S 319

Patent

active

056993730

ABSTRACT:
An oscillation polarization selective semiconductor laser that switches oscillation polarization modes between two different polarization modes includes a laser structure on a substrate. An active layer of the laser structure includes plural sets of quantum wells and barriers. The structure of at least one set of quantum wells and the barriers is different from the other sets so that the gain spectra generated in the active layer for induced mutually perpendicular propagation modes are selectively controlled by controlling the carrier density injected into the active layer. The oscillation polarization selective semiconductor laser may be used as a light source in optical communication systems.

REFERENCES:
patent: 5033053 (1991-07-01), Shimizu et al.
patent: 5390209 (1995-02-01), Vakhshoori
patent: 5438584 (1995-08-01), Paoli et al.
"Polarization insensitive strained quantum well gain medium for lasers and optical amplifiers" by A. Mathur et al. Appl. Phys. ltr. 61.(24), Dec. 14, 1992, New York; pp. 2845-2847.
"Gain Saturation Properties of a Semiconductor Gain Medium with Tensile and Compressive Strain Quantum Wells" by S. Dubovitsky et al.; IEEE Journal of Quantum Electronics; vol. 30; No. 2; Feb. 1994; N.Y. pp. 380-391.
"1.55 .mu.m Polarization-Insensitive High-Gain Tensile-Strained-Barrier MQW Optical Amplifier" by K. Magari et al. IEEE Photonics Technology Ltrs. vol. 3, No. 11, Nov. 1991; pp. 998-1000.

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