Integrated gate field effect transistors having closed gate stru

Details Integrated gate field effect transistors having closed gate stru Integrated gate field effect transistors having closed gate stru

1978-05-09

1979-10-30

Wojciechowicz, Edward J.

357 55, 357 68, H01L 2978

Patent

active

041730224

ABSTRACT:
Insulated gate field effect transistors (IGFETs) having closed gate geometries and controlled avalanche characteristics are described. The shape of the closed geometry gate is altered from the rectangular shape used heretofore in order to thereby alter the shape of the drain of the transistor and to control its avalanche characteristics.

REFERENCES:
patent: 3917964 (1975-11-01), Carlson
patent: 4025940 (1977-05-01), Kimura et al.
patent: 4063274 (1977-12-01), Dingwall

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