Superconductive oxide single crystal and manufacturing method th

Details Superconductive oxide single crystal and manufacturing method th Superconductive oxide single crystal and manufacturing method th

1992-11-06

1995-08-22

Kunemund, Robert

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Superconductor next to layer containing nonsuperconducting...

505234, 505235, 505451, 505452, 117 49, C30B 1326

Patent

active

054440408

ABSTRACT:
A method of manufacturing a single crystal of a superconductive oxide by a travelling solvent floating zone method (TSFZ Method). In this manufacturing method, a sintered feed rod of an oxide belonging to a tetragonal system, exhibiting anisotropic properties and superconductive properties and having a stoichiometric composition of the superconductive oxide is melted into a layer of a solvent mainly consisting of a oxidized copper and arranged in an infrared heating furnace under an oxygen pressure thereby growing a large single crystal of the superconductive oxide which is 5 mm or over in diameter and 40 mm or over in length.
The superconductive oxide is one selected from the group consisting of La.sub.2-x A.sub.x CuO.sub.4 (A:Sr,Ba), Nd.sub.2-x Ce.sub.x CuO.sub.4, YBa.sub.2 Cu.sub.3 O.sub.7-x, BiSrCaCu.sub.2 O.sub.x, Tl.sub.2 Ba.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x, and the growth of the single crystal is effected in such a manner that after the feed rod has been melted into the solvent having a composition of 55 to 91 mol % CuO, the single crystal is grown and increased in size under the following growth conditions: oxygen pressure=0.15 MPa or over, growth temperature=1100.degree. to 1300.degree. C. and growth rate=0.5 to 3 mm/h. Further, in the growth of the single crystal, a seed crystal is used and the seed crystal is grown by a necking growth process to effect the crystal growth along its a-axis. Further, the grown single crystal is annealed in the presence of oxygen or nitrogen.

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