Method of fabricating a semiconductor device having a multilayer

Details Method of fabricating a semiconductor device having a multilayer Method of fabricating a semiconductor device having a multilayer

1994-01-11

1995-08-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437231, H01L 2144

Patent

active

054440238

ABSTRACT:
A spin coated insulating film is coated selectively between wirings by treating the surface of a wiring layer with a fluorine compound gas plasma. The spin on glass film is made compact by exposing it to fluoroalkoxysilane vapor to accelerate condensation and polymerization of the spin coated materials. A silicon oxide film is formed by plasma excited CVD to form a flat interlayer insulating film. A fine mutilayer wiring structure can be readily formed by employing the above mentioned planarizing method of the interlayer insulating film.

REFERENCES:
patent: 5288518 (1994-02-01), Homma
patent: 5306665 (1994-04-01), Manabe
patent: 5334552 (1994-08-01), Homma
patent: 5352630 (1994-10-01), Kim et al.
patent: 5393702 (1995-02-01), Yang et al.

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