Method of making ohmic contacts to a complementary III-V semicon

Details Method of making ohmic contacts to a complementary III-V semicon Method of making ohmic contacts to a complementary III-V semicon

1993-06-25

1995-08-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437912, 437192, 148DIG20, 148DIG65, 257195, H01L 2144, H01L 2148

Patent

active

054440165

ABSTRACT:
The present invention encompasses a method for providing the same ohmic material contact (120, 122, 124) to N-type and P-type regions (70, 80) of a III-V semiconductor device. Specifically, an N-type region (70) extending through a semiconductor structure is formed. Additionally, a P-type region (80) extending through the substrate is formed. The P-type region (80) may be heavily doped with P-type impurities (81). A first ohmic region (117) is formed, contacting the N-type region (70). The first ohmic region may comprise an ohmic material including metal and an N-type dopant. A second ohmic region (119) is formed, contacting the P-type region (80, 81). The second ohmic region comprises the same ohmic material as the first ohmic region. One ohmic material that may be used is nickel-germanium-tungsten.

REFERENCES:
patent: 3684930 (1972-08-01), Collins et al.
patent: 4188710 (1980-02-01), Davey et al.
patent: 4313971 (1982-02-01), Wheatley, Jr.
patent: 4540446 (1985-09-01), Nonaka et al.
patent: 4712291 (1987-12-01), McLeuge
patent: 4729000 (1988-03-01), Abrokwah
patent: 4746627 (1988-05-01), Zuleeg
patent: 4814851 (1989-03-01), Abrokwah et al.
patent: 4830980 (1989-05-01), Hsieh
patent: 4833042 (1989-05-01), Waldrop et al.
patent: 4989065 (1991-01-01), Tsuchimoto et al.
patent: 4998158 (1991-03-01), Johnson et al.
patent: 5045502 (1991-09-01), Lau et al.
patent: 5060031 (1991-10-01), Abrokwah et al.
patent: 5091338 (1992-02-01), Tsuchimoto et al.
patent: 5093280 (1992-03-01), Tully
patent: 5100835 (1992-03-01), Zheng
patent: 5116774 (1972-05-01), Huang et al.
patent: 5144410 (1992-09-01), Johnson
patent: 5214298 (1993-05-01), Yuan et al.
patent: 5275971 (1994-01-01), Wu et al.
patent: 5281842 (1994-01-01), Yasuda et al.
patent: 5389564 (1995-02-01), Bernhardt
R. J. Graham et al., "Investigation of the Structural and Electrical Properties of Al-Ge-Ni Contacts to GaAs." Journal of Electronic Materials, vol. 19, No. 11, 1990, pp. 1257-1263.
C. C. Han et al., "Thermally stable and nonspiking Pd/Sb (Mn) ohmic contact to p-GaAs," Appl. Phys. Lett. 58 (15), 15 Apr. 1991, pp. 1617-1619.
E. Kolawa et al., "Stable Solid-Phase Contact to n-GaAs", IEEE Transactions on Electron Devices, vol. 36 No. 6, Jun. 1989, pp. 1223-1225.
S. Swirhun et al., Third Int. Conf. Indium Phosphide and Related Materials, 8 Apr. 1991, Cardiff, Wales, UK, pp. 238-241 (the whole document).
R. J. Graham et al., Journal of the Electrochemical Society, Jan. 1988, Manchester, N.H., U.S., vol. 135, No. 1, pp. 266-267 (the whole document).
N. Lustig et al., Applied Physics Letters, 13 May 1991, New York, US, vol. 58, No. 19, pp. 2093-2095 (p. 2093).
R. J. Roedel et al., Journal of the Electrochemical Society, May 1993, Manchester, N.H., US, vol. 140, No. 5, pp. 1450-1453 (p. 1450).
IBM Technical Disclosure Bulletin, Jan. 1992, New York, US, vol. 34, No. 8, pp. 470-475 (p. 473).
Halali et al., Thermally Stable In-based Ohmic Contacts to P-Type GaAs'--the whole document, Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds, Sep., 1991, pp. 179-182.
M. Murakami, Indium Based Ohmic Contacts To n And p-Type GaAs'--the whole document, Extended Abstracts, No. 437, Oct. 1990, p. 638.
D. Davito et al., Ohmic Contacts to p-and n-type GaAs Made with Al-Sn-Ni', Journal of the Electrochemical Society, vol. 140, No. 5, May 1993, pp. 1450-1453.
T. C. Shen et al., Recent Developments in Ohmic Contacts for III-V Compound Semiconductors, Journal of Vacuum Science and Technology: Part B, vol. 10, No. 5, Oct. 1992, pp. 2113-2132.
M. Murakami et al., Thermally Stable, Low-Resistance NilnWNx Ohmic Contacts to N-Type GaAs Prepared By Sputter Deposition, Applied Physics Letters, vol. 59, No. 4, Nov. 1991.
E. Kolawa et al., Solid Phase Ni/Ge Ohmic Contacts to GaAs with W-N Diffusion Barriers, Journal of Electrochemical Society, vol. 133, No. 9, Sep. 1986, the whole document.

Affiliated with

Also associated with

Rating

Method of making ohmic contacts to a complementary III-V semicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making ohmic contacts to a complementary III-V semicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making ohmic contacts to a complementary III-V semicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2141616