Fishing – trapping – and vermin destroying
Patent
1993-10-21
1994-12-06
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437228, 437133, 257 14, H01L 2120
Patent
active
053710380
ABSTRACT:
The present invention is a method of forming a quantum multi-function semiconductor device. In the method of the present invention, an insulating layer (12) is formed on a semiconductor substrate (11). An opening (14) is formed in the insulating layer (12), and a channel region (15) is formed in the opening (14). A channel layer (21) is formed over the channel region (15). An opening (23) is formed through the channel layer (21) such that a portion of the opening is over a portion of the channel region (15). A source electrode (28) is formed to contact a channel layer (17) of the channel region (15), a drain electrode (29) is formed to contact the channel layer (21), and a gate electrode (31) is formed to contact the second barrier layer (27).
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Y. Katayama et al., "In Situ Electron-Beam Lithography for Nanofabrication of AlGaAs-GaAs Heterostructures," 1st International Workshop on Quantum Function Devices QFD '92, R&D Association for Future Electron Devices, May 13-15, 1992, pp. 12-13.
Chaudhuri Olik
Dover Rennie William
Motorola Inc.
Mulpuri S.
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