Method of fabricating a short-channel DMOS transistor with remov

Details Method of fabricating a short-channel DMOS transistor with remov Method of fabricating a short-channel DMOS transistor with remov

1993-12-22

1995-08-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 44, H01L 21265

Patent

active

054440025

ABSTRACT:
The present invention relates to a method of forming a double diffused metal-oxide-semiconductor (DMOS) transistor which enables the formation of short channels. This method uses silicon nitride sidewall spacers so that the sidewall spacers can be removed without etching the field oxide, therefore the length of the channel can be minimized to reduce the channel resistance.

REFERENCES:
patent: 4722909 (1988-02-01), Parillo et al.
patent: 5320974 (1994-06-01), Hori
patent: 5328862 (1994-07-01), Goo
patent: 5369045 (1994-11-01), Ng et al.

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