Method of fabricating a flash control device which uses cascade-

Details Method of fabricating a flash control device which uses cascade- Method of fabricating a flash control device which uses cascade-

1994-09-01

1995-08-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 41, 437 43, 437 50, 437 59, 437152, 437911, 148DIG126, H01L 4900

Patent

active

054439990

ABSTRACT:
A semiconductor device is formed from a thyristor and a MOSFET cascade-connected in which the thyristor includes a bipolar transistor cascade-connected with the MOSFET, the base (p semiconductor region) of which is adapted to be punched through by the application of a working voltage. Thus, the thyristor can easily be latched and unlatched in response to the turn-on and turn-off of the MOSFET. Thus the semiconductor device can be securely on/off controlled by only the single gate (G) of the MOSFET. By using such semiconductor device as a switching element in a flash control device, a high performance flash control device with high flashing efficiency is provided.

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