Method of fabricating a semiconductor device having a borosilica

Details Method of fabricating a semiconductor device having a borosilica Method of fabricating a semiconductor device having a borosilica

1994-09-23

1995-08-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437 59, 437162, H01L 21225

Patent

active

054439949

ABSTRACT:
A bipolar transistor and a PMOS device achieves improved performance through the use of borosilicate glass (BSG) as the sidewall spacer material. The sidewall spacer material also is used for injection of boron into adjacent substrate material for forming shallow p+ doped junctions. By using diffusion from the BSG to form and/or maintain (during subsequent processing) a bipolar base region, or a PMOS source and/or drain region, rather than ion implantation, a base region is formed which is both shallow and has a low sheet resistance.

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