Method of biasing an MOS IC to operate at the zero temperature c

Details Method of biasing an MOS IC to operate at the zero temperature c Method of biasing an MOS IC to operate at the zero temperature c

1997-12-18

1999-11-02

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including temperature compensation means

327513, 330296, 330277, 330307, H03F 130

Patent

active

059778326

ABSTRACT:
A method of biasing an MOS IC includes the steps of providing the IC with two MOS transistors having substantially similar characteristics and maintaining these two transistors at different temperatures. During operation of the IC, an output voltage is generated from each of the two transistors, and a bias voltage is generated as a function of the difference between the two output voltages. This bias voltage is then fed back to the gate terminals of the two MOS transistors to set the bias voltage to a steady-state level at which the circuit will operate at a zero temperature coefficient point. This bias voltage is also coupled to the gate electrodes of other transistors within the IC, to operate these transistors at the zero temperature coefficient point. An IC operated in accordance with biasing method will exhibit superior stability with variations in ambient temperature.

REFERENCES:
patent: 3882728 (1975-05-01), Wittinger

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