Process for production of a semiconductor device having a claddi

Details Process for production of a semiconductor device having a claddi Process for production of a semiconductor device having a claddi

1993-07-16

1994-12-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 21, 437 47, 437228, H01L 2170, H01L 2700

Patent

active

053710320

ABSTRACT:
An SOI semiconductor device, for example, a DRAM device, wherein a dummy pattern layer of substantially the same thickness as a charge storage layer constituting part of a capacitor is formed by the same material as the layer in a cell nonformation region wherein memory cells are not formed around a cell formation region where memory cells are formed in an array. As a result, the large step-difference between the cell formation region and the cell nonformation region disappears, the surface of the smoothing layer formed under the charge storage layer and dummy pattern layer become smooth, air bubbles do not become entrained between the smoothing layer and supporting substrate, and the bonding of the smoothing layer and the supporting substrate becomes better. The dummy pattern layer preferably is fixed to a predetermined potential in a range from the ground level to the power source voltage. Further, the dummy pattern layer preferably is electrically connected to a cell plate layer stacked on the charge storage layer through a capacitor insulating film layer.

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