Method of making schottky diode with guard ring

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437176, 257484, 148DIG139, 148DIG140, H01L 2991, H01L 2122

Patent

active

054181852

ABSTRACT:
A Schottky diode circuit 20 is formed on a semiconductor layer 24. A conductive contact 36 on the surface of the semiconductor layer 24 forms a Schottky barrier 40 at the junction of the conductive contact 36 and the semiconductor layer 24. A guard ring 26 in the semiconductor layer 24 is adjacent to the Schottky barrier 40 and is separated from the conductive contact 36 by a portion of the semiconductor layer 24. No direct electrical path exists between the guard ring 26 and the conductive contact 36.

REFERENCES:
patent: 4607270 (1986-08-01), Iesaka
patent: 4862244 (1989-08-01), Yamagishi
patent: 4874714 (1989-10-01), Eklund

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of making schottky diode with guard ring does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making schottky diode with guard ring, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making schottky diode with guard ring will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2140255

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.