Process for fabricating storage capacitor structures using CVD t

Details Process for fabricating storage capacitor structures using CVD t Process for fabricating storage capacitor structures using CVD t

1994-06-14

1995-05-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 52, 437919, 437 47, H01L 218242

Patent

active

054181801

ABSTRACT:
An embodiment of the present invention depicts a storage capacitor comprising: a bottom plate structure having a hemispherical grain silicon surface; a titanium nitride layer adjacent and coextensive the hemispherical grain silicon; an insulating layer adjacent and coextensive the titanium nitride layer; and a top plate structure comprising conductively doped polysilicon layer superjacent and coextensive the insulating layer.

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patent: 5162248 (1992-11-01), Dennison et al.
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patent: 5278091 (1994-01-01), Fazan et al.
patent: 5279985 (1994-01-01), Kamiyama
patent: 5302540 (1994-04-01), Ko et al.
patent: 5324679 (1994-06-01), Kim et al.
patent: 5338700 (1994-08-01), Dennison et al.
patent: 5340763 (1994-08-01), Dennison et al.
patent: 5340765 (1994-08-01), Dennison et al.
Watanabe et al., A New Cyclinerical Capacitor Using Hemispherical Grained Si(HSG-Si) For 256MB DRAMS, 1992 IEDM, pp. 259-262.

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