Refractory metal capacitor structures, particularly for analog i

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

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29577C, 174 685, 357 51, H01G 1015, B41M 308, H01L 2702

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active

046384006

ABSTRACT:
A capacitor structure which is particularly suitable for use in analog integrated circuit devices employs an intermediate layer of a refractory metal disposed in a thin layer overlying a flat dielectric surface. The thinness and the low reflectivity of the refractory metal facilitates precise patterning of the upper plate of the capacitor structure. In the present invention, capacitance is no longer determined by imprecise cuts through thick oxide layers or by patterning of thick metallization layers within these apertures. The use of refractory metals in the capacitor structure also readily permits the incorporation of resistive circuit elements.

REFERENCES:
patent: 3359467 (1967-12-01), Cook
patent: 3368116 (1968-02-01), Spaude
patent: 3597834 (1971-08-01), Lathop et al.
patent: 3699011 (1972-10-01), Nishimura
patent: 4075756 (1978-02-01), Kircher et al.
"Personal Mainframe's Design Shaped Dense n-MOS Technology", by D. Seccombe et al., Electronics, Sep. 22, 1983, especially at p. 168.
"A Monolithic Data Acquisition Channel", by R. K. Hester et al., IEEE Journal of Solid-State Physics, vol. SC-18, No. 1, Feb. 1983, especially at p. 60.

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