Gate electrode sidewall isolation spacer for field effect transi

Details Gate electrode sidewall isolation spacer for field effect transi Gate electrode sidewall isolation spacer for field effect transi

1985-08-09

1987-01-20

Edlow, Martin H.

357 233, 357 239, 357 59, 357 231, H01L 2994, H01L 2978

Patent

active

046383476

ABSTRACT:
A sidewall isolation structure for field effect transistor which includes a first electrical insulating layer and a second electrical insulating layer contiguous with the first layer. The second electrical insulating material is etched above or below the surface level of the first insulating layer to provide recesses in the sidewall isolation structure, and method for the preparation thereof.

REFERENCES:
patent: 4023195 (1977-05-01), Richman
patent: 4109372 (1978-08-01), Geffken
patent: 4227944 (1980-10-01), Brown et al.
patent: 4252840 (1981-02-01), Minami
patent: 4337115 (1982-06-01), Ikeda et al.
IBM Tech. Discl. Bulletin, vol. 24, No. 1A, Jun. 1981, pp. 57-60, vol. 21, No. 3, Aug. 1978, pp. 1250-1251, vol. 24, No. 7A, Dec. 1981, pp. 3415-3416.

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