Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

1995-11-08

1997-05-06

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular biasing

36518503, 36518907, 365210, G11C 700, G11C 800

Patent

active

056277814

ABSTRACT:
A rewritable nonvolatile semiconductor memory device having a plurality of memory cells which are electrically and reversably variable in threshold values and one pair of reference cells, provided for each predetermined number of memory cells, having the same cross-sectional structure as the memory cells, the pair of reference cells having written in them data of opposite phases, and, at the time of reading, the currents of the pair of reference cells being combined to produce a reference current and the data being determined by comparing this with the signal current of the memory cell.

REFERENCES:
patent: 4964079 (1990-10-01), Devin
patent: 5025417 (1991-06-01), Miyamoto et al.
patent: 5148063 (1992-09-01), Hotta
patent: 5386388 (1995-01-01), Atwood et al.
patent: 5446686 (1995-08-01), Bosnyak et al.
patent: 5461713 (1995-10-01), Pascucci
Nakai et al., "A 36ns 1Mbit CMOS EPROM with new data sensing technique", Sep. 1990 Symposium on VLSI Circuits.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2137809