Heterojunction field effect transistor equipped with electrostat

Details Heterojunction field effect transistor equipped with electrostat Heterojunction field effect transistor equipped with electrostat

1991-09-10

1993-03-09

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257270, 257280, H01L 2980, H01L 2948, H01L 29161

Patent

active

051929864

ABSTRACT:
An heterojunction field effect transistor comprises a channel forming layer associated with a carrier supplying layer, and an electrostatic lens is provided across the channel forming layer with a focusing gate electrode appropriately biased, wherein an abrupt potential discontinuity is produced in the bottom edge of the conduction band of the channel forming layer with an emitter gate electrode provided between a source electrode and the focusing gate electrode so that hot electrons produced by the abrupt potential discontinuity have substantially uniform longitudinal electron energies allowing the hot electrons to be focused upon a focal point of the electrostatic lens.

REFERENCES:
patent: 4962410 (1990-10-01), Kriman et al.
Electron Focusing in Two-Dimensional Systems by Means of an Electrostatic Lens, Appl. Phys. Lett. 56(13), Mar. 26, 1990, pp. 1290-1292, by J. Spector, et al.

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