Method of making a silicon integrated circuit waveguide

Details Method of making a silicon integrated circuit waveguide Method of making a silicon integrated circuit waveguide

1989-03-20

1990-05-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG95, 148DIG118, 156649, 156662, 357 17, 357 49, 372102, 437 62, 437129, 437228, 437239, H01L 2176, H01L 21203

Patent

active

049277812

ABSTRACT:
A method for forming a semiconductor waveguide includes forming a layer of expitaxial silicon over a substrate. The impurity concentration of the layer is higher than that of the substrate. A second layer of epitaxial silicon is disposed over the upper surface of the layer with a higher resistivity than that of the substrate. A masking layer is then disposed over the substrate and then patterned, and then the layer selectively etched down to the upper surface of the layer. The layer is then porified to form an insulating layer from the layer. The porous film is then converted by oxidation to a silicon dioxide layer. The sidewalls of the resulting ridge are then oxidized to form sidewall layers and then the masking layer removed from the upper layer. The upper surface of ridge is oxidized to form an upper insulating layer to extend the sidewall layer over the entire upper surface and sidewalls of the ridge. A layer of insulating material is then disposed over the substrate.

REFERENCES:
patent: 4104090 (1978-08-01), Pogge
patent: 4426440 (1984-01-01), Thompson
patent: 4464762 (1984-08-01), Furuya
patent: 4628591 (1986-12-01), Zorinsky et al.
patent: 4737946 (1988-04-01), Yamashita et al.
patent: 4750799 (1988-06-01), Kawachi et al.
patent: 4810667 (1989-03-01), Zorinsky et al.

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