Method of making high breakdown voltage semiconductor device

Details Method of making high breakdown voltage semiconductor device Method of making high breakdown voltage semiconductor device

1989-05-30

1990-05-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 27, 437228, 437933, 437953, 437958, 437148, 437149, H01L 2126

Patent

active

049277723

ABSTRACT:
A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.

REFERENCES:
patent: 4374389 (1983-02-01), Temple et al.
patent: 4648174 (1987-03-01), Temple et al.
patent: 4825266 (1989-04-01), Whight
R. Stengl and U. Gosele, "Variation of Lateral Doping--A New Concept to Avoid High Voltage Breakdown of Planar Junctions", Siemens Research Labs., IEDM-85, pp. 154-157.

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