CCD-solid state image sensor using electron and hole signal char

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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Details

257224, 257246, 257248, 257912, 257231, H01L 27148, H01L 29768

Patent

active

056273886

ABSTRACT:
A CCD-solid state image sensor includes a sensing area for generating signal charges in response to incident light, a storage area for storing the signal charges from the sensing area, an HCCD (Horizontal Charge Coupled Device) for extracting the signal charges stored in the storage area, a high sensitivity signal charge detection and amplification circuit for detecting and amplifying signal charges of electrons from the HCCD, and a low sensitivity signal charge detection and amplification circuit for detecting and amplifying signal charges of holes from the HCCD.

REFERENCES:
patent: 3896484 (1975-07-01), Nishizawa et al.
patent: 3996599 (1976-12-01), King
patent: 4223329 (1980-09-01), Jambotkar
patent: 4468684 (1984-08-01), Esser et al.
patent: 5309004 (1994-05-01), Grudkowski
patent: 5359213 (1994-10-01), Lee et al.

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