Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

1996-04-23

1997-05-06

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257408, 257410, H01L 2976

Patent

active

056273843

ABSTRACT:
Method of improving making contact with the source/drain regions of thin-film transistors. A substantially triangular insulator determines contacts with the source/drain regions by a self-aligning process. The width of this insulator can be determined without performing mask alignment. Furthermore, the width can be reduced. Therefore, the sheet resistance of the source/drain regions presents no serious problems.

REFERENCES:
patent: 4638347 (1987-01-01), Iyer
patent: 5243213 (1993-09-01), Miyazawa
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5341012 (1994-08-01), Misawa et al.
IBM TDB, vol. 29, No. 7, Dec. 1986, p. 2913 "Tapered Sidewall Field-Effect Transistor Gates".

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