Method for producing a fluorine-containing amorphous semiconduct

Details Method for producing a fluorine-containing amorphous semiconduct Method for producing a fluorine-containing amorphous semiconduct

1983-06-10

1984-11-27

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 87, 427 95, B05D 306

Patent

active

044851219

ABSTRACT:
Production of fluorine-containing amorphous semiconductors having high thermal stability, photoconductivity and photosensitivity by decomposing a mixed gas of silicon difluoride gas or silicon monofluoride gas with hydrogen gas or hydrogen atom gas, or SiFH.sub.3 gas or SiF.sub.2 H.sub.2 gas with electric discharge and depositing the decomposed gas on a substrate.

REFERENCES:
patent: 4226898 (1980-10-01), Ovshinsky et al.

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