Methods and test structures for measuring overlay in multilayer

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364559, 324699, 324715, 324716, 324765, 437 8, 430 22, 430 30, G01B 1127, G01D 1800

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active

056992823

ABSTRACT:
Imaging instruments for inspecting products, such as semiconductor chips, e calibrated by providing a reference test structure having features which can be located by electrical measurements not subject to tool-induced shift and wafer-induced shift experienced by the imaging instrument, and by the imaging instrument. The reference test structure is first qualified using electrical measurements, and is then used to calibrate the imaging instrument. The electrical measurements are made by forcing a current between a plurality of spaced reference features and a pair of underlying conductors. Conductive connectors formed in vias in an insulating layer overlying the pair of conductors and individually connected to a respective conductive element formed on the insulating layer are each spaced at progressively greater distances relative to the centerline of the space between the pair of conductors, such that a null-overlay element may be identified.

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