Semiconductor laser array

Details Semiconductor laser array Semiconductor laser array

1996-12-09

1999-03-23

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

058870121

ABSTRACT:
A semiconductor laser array according to the invention is so constructed that plural LDs are driven by the same modulating signal, and series connection of the plural LDs becomes possible. Accordingly, efficiency of modulation of the aforementioned semiconductor laser array is largely improved. After a n-InP clad layer 6, an active layer 7 and a p-InP layer 8 are successively grown on a semi-insulating substrate 5, the n-InP clad layer 6 is etched and a stripe shaped mesa is formed. Then, a p-InP current blocking layer 9 and a n-InP current blocking layer 10 are grown on the etched portion. After fabricating a p+-InP cap layer 11 thereon, the surface of the n-InP clad layer 6 is exposed by selective etching. Moreover, a channel 12 for isolating the adjacent LDs, reaching the semi-insulating layer 5, is formed by penetrating the n-InP clad layer 6. Each of the LDs is provided with a p-side electrode 13 and a n-side electrode 14 thereon, and a p-side electrode 13 of any LD is connected to the n-side electrode of an adjacent LD by a bonding wire 3.

REFERENCES:
patent: 4977570 (1990-12-01), Hasegawa
patent: 5179567 (1993-01-01), Uomi et al.
patent: 5513200 (1996-04-01), Paoli
Oishi et al, "The 19th European Conference on Optical Communication," 1993, Switzerland, pp. 21-24 (No month).

Affiliated with

Also associated with

Rating

Semiconductor laser array does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser array will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2133516