Semiconductor devices encapsulated with aluminum nitride-filled

Details Semiconductor devices encapsulated with aluminum nitride-filled Semiconductor devices encapsulated with aluminum nitride-filled

1995-06-07

1997-05-06

Picardat, Kevin

Plastic and nonmetallic article shaping or treating: processes

Mechanical shaping or molding to form or reform shaped article

To produce composite, plural part or multilayered article

438127, H01L 2160

Patent

active

056271077

ABSTRACT:
Semiconductor devices are encapsulated in a thermosetting resin filled with aluminum nitride particles. The aluminum nitride particles have an outer layer of Al-O-N, into which is incorporated amorphous Si-O, which renders them hydrolyrically stable. The aluminum nitride particles impart very high thermal conductivity to the cured resin. In addition, the cured resin has a CTE similar to that of the encapsulated semiconductor device, and has excellent dielectric properties.

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P. Bujard et al., "Thermal Conductivity of Molding Compounds for Plastic Packaging", 44th Electronic Components and Technology Conference, Wash. D.C. May 1-4, 1994.
P. Bujard, et al., "Thermal Conductivity of a Chain of Particles in Close Contact in a Matrix of Epoxy Resin", 22nd Int'l Thermal Conductivity Conf., Phoenix, 1993 month unknown.

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