Method for fabricating MIS semiconductor device

Details Method for fabricating MIS semiconductor device Method for fabricating MIS semiconductor device

1994-01-18

1997-05-06

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437411FT, H01L 21336

Patent

active

056270844

ABSTRACT:
A MIS type semiconductor device and a method for fabricating the same characterized in that impurity regions are selectively formed on a semiconductor substrate or semiconductor thin film and are activated by radiating laser beams or a strong light equivalent thereto from above so that the laser beams or the equivalent strong light are radiated onto the impurity regions and on an boundary between the impurity region and an active region adjoining the impurity region.

REFERENCES:
patent: 5287205 (1994-02-01), Yamazaki et al.
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5403762 (1995-04-01), Takemura
patent: 5508209 (1996-04-01), Zhang et al.
patent: 5545571 (1996-08-01), Yamazaki et al.

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