Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Patent
1997-08-06
1999-03-23
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
257 75, 257 96, 257 76, 257103, H01L 2904, H01L 3300
Patent
active
058863672
ABSTRACT:
An epitaxial wafer for a light-emitting device has a double hetero-structure and includes a single-crystal substrate, a lower cladding layer of AlGaN grown on the substrate, an active layer grown on the lower cladding layer, the active layer having a two-phase structure comprised of a matrix of Al.sub.x Ga.sub.y In.sub.z N and crystallets of Al.sub.a Ga.sub.b In.sub.c N, and an upper cladding layer of AlGaN grown on the active layer.
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patent: 5455431 (1995-10-01), Manabe et al.
"Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy", N. Yoshimoto et al., NTT Opto-Electronics Lab, 162 Tokai, Ibaraki 319-11, Japan; Applied Phy Lett vol. 59, No. 18, 28 Oct. 1991, pp. 2251-2253.
"Candela-class high-brightness InGaN/AIGaN double-heterostructure blue-light-emitting diodes", Shuji Nakamura et al., Appl. Phys. Lett vol. 64 No. 13, Mar. 28, 1994, American Institute of Physics 1994, pp. 1687-1689.
"High-brightness InGaN/AIGaN double-heterstructure blue-green-light-emitting diodes", Shuji Nakamura et al., Appl. Phys. Lett vol. 76, No. 12, Dec. 15, 1994, American Institute of Physics 1994, pp. 8189-8191.
"InGaN/AIGaN blue-green-light-emitting diodes", Shuji Nakamura, J. Vac. Sci. Technol. A, vol. No. 13, May/Jun. 1995, American Vacuum Society, pp. 705-710.
"High-brightness InGaN/AIGaN Blue, Green and Yellow Light-Emitting Diodes With Quantum Well Structures", Shuji Nakamura et al., Jpn. J. Appl. Phys. vol. 34, (1995) Pt 2, No. 7A, Jul. 1995, pp. L797-L799.
"Superbright Green InGaN Single Quantum-Well-Structure Light-Emitting Diodes", Shuji Nakamura et al., Jpn J. Appl. Phys. vol. 34, (1995) Pt 2, No 10B, No. 10B Oct. 15, 1995, pp. L1332-L1335.
Guay John
Showa Denko K.K.
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