Thin film type monolithic semiconductor device

Details Thin film type monolithic semiconductor device Thin film type monolithic semiconductor device

1997-05-29

1999-03-23

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 66, 257 70, 257 72, 257 75, H01L 31036, H01L 2904

Patent

active

058863664

ABSTRACT:
A monolithic type active matrix semiconductor device comprises a substrate having an insulating surface, a first plurality of thin film transistors formed on the substrate, each having a first channel region comprising an amorphous silicon semiconductor film, and a second plurality of thin film transistors, each having a second channel region comprising a crystalline semiconductor film. The crystalline semiconductor film of the second plurality of thin film transistors has a substantially single crystalline structure (mono-domain structure) and is doped with a recombination center neutralizer at a concentration of 1.times.10.sup.16 to 1.times.10.sup.20 atoms/cm.sup.3. The crystalline semiconductor film of the second plurality of thin film transistors contains a catalyst element which is capable of promoting crystallization of silicon.

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