Method of anodically leveling semiconductor layers

Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge

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C25F 312, C25F 314

Patent

active

041667824

ABSTRACT:
A method for the thinning and automatic leveling of layers of a semicondur for use in device fabrication applications. The method is to be employed with anodic thinning wherein a conducting semiconductor layer on a high resistivity substrate is placed in a suitable electrolyte and voltage is applied so that the sample is made positive with respect to a cathode, also immersed in the electrolyte. The instant method is directed to the anodic thinning of irregularities in the semiconductor by slowly immersing the semiconductor into the electrolyte such that the location of irregularities can be determined and processed by monitoring the anodic process.

REFERENCES:
patent: 3161576 (1964-12-01), Teichner
patent: 3890215 (1975-06-01), Di Lorenzo et al.
patent: 3962052 (1976-06-01), Abbas et al.

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