Metal fusion bonding – Process – Metal to nonmetal with separate metallic filler
Patent
1995-11-13
1997-05-06
Heinrich, Samuel M.
Metal fusion bonding
Process
Metal to nonmetal with separate metallic filler
228206, 228209, H05K 334
Patent
active
056262795
ABSTRACT:
For fastening a first substrate (11) on a second substrate (21), gallium is selectively deposited on the surface of electrically conductive structures (18) located on the first substrate (11), being deposited in a CVD process upon employment of a metalloorganic compound. After the joining of the substrates (11, 21), the gallium (19) is mixed with a metal (28) that forms a refractory intermetallic phase with gallium, this forming a firm connection between the substrates. The method can be especially utilized for cubic integration.
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Tsubouchi, et al., "Area-Selective CVD of Metals", Thin Solid Films, Bd., 228, pp. 312-318, 1993.
Pamler Werner
Schwarzl Siegfried
Heinrich Samuel M.
Siemens Aktiengesellschaft
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