Semiconductor device including a conductor surrounded by an insu

Details Semiconductor device including a conductor surrounded by an insu Semiconductor device including a conductor surrounded by an insu

1975-04-22

1976-02-03

Miller, Jr., Stanley D.

357 52, 357 55, H01L 2978, H01L 2934, H01L 2906

Patent

active

039368599

ABSTRACT:
A silicon-gate insulated gate field effect transistor device has a thick field oxide in contiguous surrounding relation to its gate electrode and with a surface coplanar with or slightly higher than the surface of the gate electrode, thus facilitating crossovers and contacts to the gate electrode. The method of making this device includes forming a self-aligned silicon gate structure on a silicon wafer, masking the gate structure against the diffusion of oxygen, and thereafter oxidizing the silicon wafer to grow a thick silicon dioxide layer in surrounding relation to the silicon gate structure.

REFERENCES:
patent: 3761327 (1973-09-01), Harlow et al.

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