Patent
1974-05-28
1976-02-03
James, Andrew J.
357 20, 357 22, 357 35, 357 41, 357 48, 357 58, H01L 2974
Patent
active
039368564
ABSTRACT:
A space-charge-limited integrated circuit structure featuring optimized geometry to allow maximum packing density of the transistors in a semiconductor substrate.
The widths of any two isolated regions of the same conductivity type are established in relation to the width of the region separating the isolated regions. The width of the region which separates two isolated regions having the same conductivity type as the high resistivity substrate must be greater than 0.75 times the width of either of the isolated regions. Conversely, the width of the region which separates the isolated regions having the opposite conductivity type to the substrate must be greater than 0.25 times the width of either of the isolated regions.
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L. Clark, "Now, New Unijunction Geometries," Electronics, June 14, 1965, pp. 93-97.
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S. Magdo, "Theory and Operation of Space-Charge-Limited Tran. S. with Transverse Injection," IBM J. of R. & D., Vol. 17, No. 5, Sept. 1973, pp. 443-458.
Clawson Jr. Joseph E.
Galvin Thomas F.
International Business Machines - Corporation
James Andrew J.
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