Bipolar memory cell employing inverted transistors and pinched b

Details Bipolar memory cell employing inverted transistors and pinched b Bipolar memory cell employing inverted transistors and pinched b

1975-01-20

1976-02-03

Hecker, Stuart N.

Communications: electrical

Digital comparator systems

307291, 357 51, G11C 1140

Patent

active

039368130

ABSTRACT:
A bipolar random access memory cell is disclosed using a pair of transistors cross-coupled in a flip flop configuration with the transistors connected to operate in the inverted mode, that is, the collectors as emitters and the emitters as collectors. This allows an integrated circuit realization of a random access memory having only one and one-half isolation regions per row of memory cells. Forming the flip flop load resistors by the emitter-pinched base method compensates the cell for process variations to result in substantially constant read/write characteristics.

REFERENCES:
patent: 3655999 (1972-04-01), Wiedmann
patent: 3693057 (1972-09-01), Wiedmann
Frantz et al., Monolithic Electric Circuit, IBM Technical Disclosure Bulletin, Vol. 14, No. 6, 11/71, p. 1684.
Haug et al., Single Emitter Pinch Resistor Cell, IBM Technical Disclosure Bulletin, Vol. 13, No. 2, 7/70, pp. 475-476.
Wiedmann, Random Access Memory Cell, IBM Technical Disclosure Bulletin, Vol. 14, No. 6, 11/71, pp. 1721-1722.
Wiedmann et al., Small-Size Low-Power Bipolar Memory Cell, IEEE Journal of Solid-State Circuits, Vol. SC-6, No. 5, 10/71, pp. 283-288.

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