Monolithically integrated semiconductor device containing bipola

Details Monolithically integrated semiconductor device containing bipola Monolithically integrated semiconductor device containing bipola

1988-11-28

1989-12-12

Edlow, Martin H.

357 42, 357 41, 357 44, 357 48, H01L 2702

Patent

active

048871427

ABSTRACT:
Disclosed is a monolithic integrated semiconductor device which may contain specimens of seven different circuit components; namely: lateral N-MOS and lateral P-MOS transistors (CMOS), vertical N-DMOS and vertical P-DMOS transistors, vertical NPN bipolar transistors, vertical PNP bipolar transistors with isolated collector and low leakage junction diodes as well as a process for fabricating such a device.

REFERENCES:
patent: 4546370 (1985-10-01), Curran
patent: 4589004 (1986-05-01), Yasuda

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