Semiconductor memory device and the method for manufacturing the

Details Semiconductor memory device and the method for manufacturing the Semiconductor memory device and the method for manufacturing the

1987-10-20

1989-12-12

Hille, Rolf

357 55, 357 41, H01L 2978, H01L 2906, H01L 2702

Patent

active

048871362

ABSTRACT:
A dynamic semiconductor memory device comprising a substrate having one trench including two capacitors for memory cell capacitances of two bits, and two elements such as transistors for reading, writing, and storing information represented by charge, arranged symmetrically at the central portion of the trench so as to correspond to the memory cells for two bits, and a field oxide film formed at the center of the trench on the bottom and on the side walls for separating the capacitors and elements.

REFERENCES:
"Subthreshold Conduction in MOSFET's", Geoffrey W. Taylor, IEEE Transactions on Electron Devices, vol. ED-26, No. 3, Mar. 1978.

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