Semiconductor device having a semiconductor region in which eith

Details Semiconductor device having a semiconductor region in which eith Semiconductor device having a semiconductor region in which eith

1987-09-21

1989-12-12

James, Andrew J.

357 2, 357 4, 357 34, H01L 2904, H01L 2916, H01L 2970

Patent

active

048871346

ABSTRACT:
An improved semiconductor device such as an improved graded band gap transistor and an improved graded band gap diode, characterized by comprising a non-single-crystal material containing silicon atom, a band gap adjusting atom and a localized level reducing atom and having a region in which a band gap continuously graded at least one position other than junction position and only one of a conduction band and a valence band being continuously graded. It gives a significant improvement in both the frequency characteristic and the photoresponse.

REFERENCES:
patent: 4254429 (1981-03-01), Yamazaki
patent: 4353081 (1982-10-01), Allyn
patent: 4460669 (1984-07-01), Ogawa et al.
patent: 4710786 (1987-12-01), Ovshinsky et al.

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