Power transistor with improved resistance to direct secondary br

Details Power transistor with improved resistance to direct secondary br Power transistor with improved resistance to direct secondary br

1987-12-21

1989-12-12

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307255, 3073031, 307270, 307259, 307302, 323315, 323268, 323272, 357 44, 357 46, 357 35, H03K 1760, H03K 326, G05F 316, H01L 2702

Patent

active

048869821

ABSTRACT:
This power transistor comprises a plurality of elementary transistors, also indicated as "fingers", having their emitter terminals mutually connected and forming a common emitter terminal, collector terminals also mutually connected and forming a common collector terminal, and base terminals connected to at least one current source. Each elementary transistor is part of a circuit comprising a diode forming, together with the elementary transistor, a current mirror, so that the collector current passing through the elementary transistor is far less sensitive to the temperature gradients which originate inside the power transistor.

REFERENCES:
patent: 4296336 (1981-10-01), Skanadore
patent: 4352057 (1982-09-01), Okada et al.
patent: 4672235 (1987-06-01), Villa et al.
patent: 4682197 (1982-07-01), Villa et al.
patent: 4733196 (1988-03-01), Menniti et al.

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