Semiconductor laser with InGaAs or InGaAsP active layer

Details Semiconductor laser with InGaAs or InGaAsP active layer Semiconductor laser with InGaAs or InGaAsP active layer

1992-10-08

1994-05-03

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

372 43, H01S 319

Patent

active

053094670

ABSTRACT:
A semiconductor laser having a buried stripe structure is provided, which comprises a first cladding layer of InP, an active layer containing at least an InGaAsP or InGaAs layer, a barrier layer of In.sub.1-x Al.sub.x As (x=0.48 to 1.00), a second cladding layer of InP, a mesa-shaped stripe portion composed of the first cladding layer, active layer, barrier layer and second cladding layer, and a pair of buried layers disposed on both sides of the stripe portion so as to bury the same therebetween formed in this order on an InP substrate. The hetero barrier of conduction band between the active and barrier layers is increased by the barrier layer when an electric current is injected, thus being capable of restricting the electrons injected into the active layer to be leaked to the second cladding layer. It is preferable that a second barrier layer of In.sub.1-x Al.sub.x As (x=0.48 to 1.00) is disposed on each side of the stripe portion.

REFERENCES:
patent: 4546479 (1985-10-01), Ishikawa et al.
patent: 4817105 (1989-03-01), Yano
patent: 5073805 (1991-12-01), Nomura et al.
Patent Abstracts of Japan, vol. 8, No. 239, Nov. 1, 1984, p. 81E276.
"Optical Communication Device Technology-Light-Emitting and Receiving Devices" by Hiroo Yonezu, pp. 225-243 (with English relevance) Feb. 1984.

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