Stacked complementary metal oxide semiconductor inverter

Details Stacked complementary metal oxide semiconductor inverter Stacked complementary metal oxide semiconductor inverter

1986-05-16

1987-10-06

Carroll, J.

357 231, 357 237, 357 59, 357 67, 357 71, H01L 2978, H01L 2702, H01L 2904, H01L 2348

Patent

active

046986596

ABSTRACT:
An MOS transistor of second conductivity type is provided which is formed in a semiconductor substrate of first conductivity type and includes a first source region of second conductivity type, a first drain region of second conductivity type, and a gate electrode provided on a gate insulation layer. Further, an MOS transistor of first conductivity type is provided which is stacked on the MOS transistor of second conductivity type and includes a second source region, a second drain region and the gate electrode. The first and second source regions are connected to each other through a conductive layer which is selected from a given metal layer and a given metal silicide layer.

REFERENCES:
patent: 4329706 (1982-05-01), Crowder et al.
patent: 4333099 (1982-06-01), Tanguay et al.
patent: 4343082 (1982-08-01), Lepselter et al.
patent: 4374700 (1983-02-01), Scott et al.
Colinge et al., "A High Density CMOS Inverter With Stacked Transistors," IEEE Electron Device Letters, vol. EDL-2, No. 10, Oct. 1981; New York, pp. 250-251 (FIG. 1).
J. F. Gibbons et al., "One-Gate-Wide CMOS Inverter on Laser-Recrystallized Polysilicon" IEEE Electron Device Letters, vol. EDL-1, (1980) pp. 117-118.
Colinge et al., "Stacked Transistors CMOS (ST-MOS), an NMOS Technology Modified to CMOS," IEEE Journal of Solid-State Circuits, vol. SC-17, No. 2, Apr. 1982.

Affiliated with

Also associated with

Rating

Stacked complementary metal oxide semiconductor inverter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stacked complementary metal oxide semiconductor inverter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stacked complementary metal oxide semiconductor inverter will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2120968