Photosensitive member having an amorphous silicon layer

Details Photosensitive member having an amorphous silicon layer Photosensitive member having an amorphous silicon layer

1985-10-28

1987-10-06

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 84, 430 95, G03G 5085

Patent

active

046982876

ABSTRACT:
The invention disclosed relates to a photosensitive member which comprises a conductive substrate, a first amorphous silicon: germanium layer, an amorphous silicon layer formed on said first layer and having a thickness of about 10 to 100 .mu.m and a second amorphous silicon: germanium layer formed on said amorphous silicon layer and having a thickness of less than about 4 .mu.m. The photosensitive member of the present invention has improved sensitivity toward long wavelength light and excellent chargeability, and is free of residual potential and interference phenomena.

REFERENCES:
patent: 4451546 (1984-05-01), Kawamura et al.
patent: 4490450 (1984-12-01), Shimizu et al.
patent: 4491626 (1985-01-01), Kawamura et al.
patent: 4592982 (1986-06-01), Saitoh et al.

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