Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Patent
1992-07-27
1994-05-03
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
257774, 257751, 257780, H01L 2329, H01L 2348, H01L 2946, H01L 2954
Patent
active
053090250
ABSTRACT:
A method for forming an improved bonding pad structure. A bond pad structure is formed by depositing a barrier layer over an underlying region of a semiconductor device, and then depositing a first conductive layer over the barrier layer. The barrier layer and conductive layer are then patterned and etched to define a conductive region. In a preferred embodiment, the conductive region is formed in the shape of a grid. A second conductive layer is deposited over the conductive region and a portion of the exposed underlying region. The second conductive layer makes a good adhesive contact with the underlying region, thus preventing bond pad lift off.
REFERENCES:
patent: 4705606 (1987-11-01), Young et al.
patent: 4984061 (1991-01-01), Matsumoto
patent: 5189506 (1993-02-01), Cronin et al.
Bryant Frank R.
Chen Fusen E.
Hill Kenneth C.
James Andrew J.
Jorgenson Lisa K.
Meier Stephen D.
Robinson Richard K.
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