Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1992-10-13
1994-05-03
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257462, H01L 2972, H01L 3110
Patent
active
053090136
ABSTRACT:
A photoelectric conversion device has a plurality of photoelectric conversion cells, each cell having a semiconductor transistor comprising two main electrode regions made of one conductive type semi-conductor and a control electrode region made of another conductive type semiconductor and a capacitor for controlling the control electrode region at a floating state, the potential at the control electrode region at a floating state being controlled by means of the capacitor so that carriers generated by light are stored in the control electrode region and the output of each cell is controlled in accordance with the storage voltage generated by the storage. In such a photo-electric conversion device, an isolation region for electrically insulating adjacent photoelectric conversion cells includes an insulation region and a semiconductor region of high impurity density formed beneath the insulation region; and the semiconductor region of high impurity density is made of the same conductive type semiconductor as the main electrode regions.
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International Electron Devices Meeting, Technical Digest, Dec. 13-15, 1982, San Francisco, Calif., pp. 62-65.
Matsumoto Shigeyuki
Suzuki Toshiji
Canon Kabushiki Kaisha
Jackson Jerome
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