Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1992-02-28
1994-05-03
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257 13, 257 96, 257192, 257252, H01L 29161, H01L 2980
Patent
active
053090039
ABSTRACT:
Real space transfer (RST) semiconductor devices of novel geometry are disclosed. The devices are processed such that, at least in the active region of the devices, bulk semiconductor material is removed, and such that both the channel length L.sub.ch and the collector width W are defined lithographically. The channel length is defined by a trench etched through a highly conductive emitter contact layer. The trench is situated directly opposite the collector. Devices according to the invention can have relatively small parasitic capacitance, and therefore are potentially fast. A processing method that can be used to make devices of the novel geometry is also disclosed.
REFERENCES:
patent: 4675717 (1987-06-01), Herrero et al.
patent: 4686550 (1987-08-01), Capasso et al.
patent: 4727403 (1988-02-01), Hida et al.
patent: 4903092 (1990-02-01), Luryi et al.
patent: 4933728 (1990-06-01), Fukuzawa et al.
patent: 4999687 (1991-03-01), Luryi et al.
patent: 5008891 (1991-04-01), Morita
patent: 5021841 (1991-06-01), Leburton et al.
patent: 5055891 (1991-10-01), Moll et al.
patent: 5157467 (1992-10-01), Fujii
S. Luryi's chapter in "Heterojunction Band Discontinuities: Physics and Device Applications", F. Capasso et al., editors, Elsevier 1987, pp. 513-539.
"Light-emitting Devices Based on the Real-space Transfer of Hot Electrons", by S. Luryi, Applied Physics Letters, vol. 58(16), Apr. 22, 1991 pp. 1727-1729.
"Real-space Transfer in Three-terminal InGaAs/InAlAs/InGaAs Heterostructure Devices", by P. M. Mensz et al., Applied Physics Letters, vol. 56(25), Jun. 18, 1990, pp. 2563-2565.
"Quench of Hot-Electron Real Space Transfer by Electronic Screening", by C. Liu et al., IEEE Transactions on Electron Devices, vol. 38, No. 11, Nov. 1991, pp. 2417-2422.
"Improved Microwave Performance in Transistors Based on Real Space Electron Transfer", by M. R. Hueschen, Applied Physics Letters, vol. 57(4), Jul. 23, 1990, pp. 386-388.
"High Frequency Characteristics of Charge-Injection Transistor-Mode Operation in AlGaAs/InGaAs/GaAs Metal-Insulator-Semiconductor Field-Effect Transistors", by K. Maezawa et al, Japanese Journal of Applied Physics, vol. 30, No. 6, Jun. 1991, pp. 1190-1193.
AT&T Bell Laboratories
Hille Rolf
Pacher Eugen E.
Saadat Mahshid
LandOfFree
Article comprising a real space transfer semiconductor device, a does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Article comprising a real space transfer semiconductor device, a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Article comprising a real space transfer semiconductor device, a will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2116307